Conference Program

 


June 16: Motor Control

14:30 CEST
8:30am EST

Power-Up Opening

Bolaji Ojo, Group Publisher and co-Global Editor-in-chief, Aspencore
Maurizio Di Paolo Emilio, Editor-in-chief, Power Electronics News & EEWeb

14:35 CEST
8:35am EST
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Power Semiconductors: The Key Component for Motor Inverters

Dr. Michael Ebli, M.Sc., System Application Engineer Drives, Infineon Technologies AG
Power semiconductors are the key component of every motor inverter because they are enabling the control of speed and torque of an electrical motor. Infineon Technologies offers with the TRENCHSTOP™ IGBT7, a technology that was optimized for motor inverters. Here, low condition losses are a key feature of this technology. However, integrating the inverter into the motor CoolSiC™ MOSFETs is a good choice due to their low switching losses and ohmic behavior during conduction. The power semiconductor controlling and sensing is also an important function of each motor inverter. During the talk, you will learn about trends of motor inverters and solutions from Infineon Technologies AG.

15:05 CEST
9:05am EST
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Synchronised Motion Control in Industrial Automation: Why it Matters

Dara O’Sullivan, System Applications Manager within Industrial Automation business, Analog Devices (ADI)
Synchronisation in Motor Control applications directly relates to process and production efficiency and quality, and is a multi-layered requirement. It starts with the motor phase current sensing methodology and how that is aligned with the motor actuation via the power inverter, and continues through the interconnect between motion axes and between networked nodes. This keynote will highlight value and importance of tight synchronisation in networked and multi-axis motion control applications for industrial automation.

15:35 CEST
9:35am EST
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Empowering Intelligent Automation & Motion Control

Jeff DeAngelis, Managing Director Industrial & Healthcare BU - Maxim Integrated
Industrial Convergence is driving discussions around the automation industry, calling for more Intelligence at the Edge. As a result, a new way of thinking is needed to translate semiconductor solutions into products that provide better real-time information so that AI algorithms can be used to optimize an entire factory as well as its individual machines. In order to accomplish this level of automation and flexibility, every aspect of the equipment needs to evolve. In the area of motion control there is a need to develop smart actuators. These smart actuators will provide the necessary control of the flow and speed in which a product is moved through its operations. Since all applications require their own unique set of motion control and motor drive, these smart actuators will need to provide higher efficiency to limit power dissipation and enable smaller sizes, better control of positioning and torque, as well as the ability to self-tune and optimize their performance while in operation. This combination of smart integration will enable a new class of products to meet the demands of Industry 4.0 and beyond.

16:00 CEST
10:00am EST
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PANEL PRESENTATION — Motor Control Solutions for Any Power Requirements

Moderator: Maurizio Di Paolo Emilio, Editor-in-chief, Power Electronics News & EEWeb
Dr. Michael Ebli, M.Sc., Application Engineering Industrial Drives, Infineon Technologies AG
Cristian Ionescu-Catrina, Senior Product Marketing Manager, Power Integrations
Jeff DeAngelis, Managing Director Industrial & Healthcare BU, Maxim Integrated
Michael Randt, CEO, Trinamic
Matt Hein, Applications Manager for Brushless DC Motor Drivers, Texas Instruments

The challenges of motion control will revolve around the concept of the smart factory. The answer will most likely come with the complete optimization and digitization of products and services.

16:50 CEST
10:50am EST
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The Benefits of Slew Rate Controlled Gate Drive for Motor Control Applications

Dara O’Sullivan, Application System Manager within Industrial Automation business, Analog Devices

Slew rate control of the inverter switch node provides a degree of control over conducted EMI in a motor control system. This can help reduce requirements on input and output filters, which are often designed around light load worst case EMI. By contrast full load efficiency requirements are generally better met by faster switching of the inverter node. A dual mode slew rate control gate driver will be presented and its benefits in motor control systems from this perspective outlined.

17:00 CEST
11:00am EST
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Design tips for high peak current handling in motion control

Nicholas Powers, Senior Applications Engineer, Arrow

Motion control systems have unique and dynamic power requirements, especially for current. This presentation will cover design decisions related to properly sizing a power system with a specific focus on the needs of motion control, stall currents, peak currents, and inrush.

17:10 CEST
11:10am EST
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Design and considerations for MLCCs in High Voltage Wide Bandgap Resonant Converters

Samuel Accardo, Field Application Engineer, Kemet Electronics

This presentation will cover the requirements for capacitors in WBG inverter subsystems, KEMET's Class I MLCC suitability and capability for applications in WBG inverter subsystems, KEMET's KC-LINK capacitor, and KEMET's new leadless stack packaging technology called KONNEKT. 

17:30 CEST
11:30am EST
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Motor Speed Control using Hall-Effect Sensors

Maurizio Di Paolo Emilio, Ph.D, Editor-in-chief, Power Electronics News
A Hall-effect sensor varies its output voltage in response to a magnetic field. Hall-effect devices are used as proximity sensors and for positioning, speed, and current detection. They are widely used in motor control systems.

17:40 CEST
11:40am EST
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Making Smart Power a reality!

Patrick Le Fevre, Chief Marketing and Communications Office for Powerbox
Industry 4.0, Smart Industry, Smart Power are very common buzz words but what does that really mean for a power designer?

17:50 CEST
11:50am EST

Closing Agenda


June 17: Wide-Bandgap Semiconductors

14:30 CEST
8:30am EST
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Update from the Front Lines: GaN vs Si at 48 V

Alex Lidow, Ph.D., CEO - EPC
GaN devices offer the best performance in the smallest size to increase the efficiency, shrink the size, and reduce system cost for 48-V power conversion. The increasing adoption of eGaN FETs and ICs in 48-V applications in high volumes have already been realized in high-density computing and many new automotive designs. In all the topologies with 48-V input, the highest efficiency comes with using GaN devices.

15:00 CEST
9:00am EST
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Ready To Make The Switch?

Maurice Moroney, Strategic Marketing & Business Lead for the isolated Power products - Analog Devices (ADI)
As GaN and SiC devices deliver exciting new levels of performance in systems, designers are faced with the challenge of integrating the new power switch topology into their systems, and quickly discovering that what worked in the past may not be ideal now. Just as the switch has evolved, so too will the system need to evolve to match, and some of the key features to enable this will be discussed.

15:30 CEST
9:30am EST
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Enabling Superior Power Conversion Efficiency with State-of-the-Art SiC Devices

Ming Su, Ph.D., Technical Marketing Manager - ROHM Semiconductor
With SiC semiconductors driving today’s power electronics innovation in multiple industries across the globe, we are excited to present the latest technology status and performance features of SiC MOSFET and diode products. Combining characteristics of low energy losses, high switching frequency, and superior reliability, these devices are positioned to dramatically improve efficiency of silicon-based power converters and enable system benefits with increasingly competitive cost. Join us to find out how the advances in SiC technology can create value for rapidly growing power applications like electric vehicles, energy storage, data centers, and more.

16:00 CEST
10:00am EST
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PANEL PRESENTATION — Are You GaN or SiC?

Moderator: Maurizio Di Paolo Emilio, Editor-in-chief, Power Electronics News & EEWeb
Thomas Schafbauer, Vice President Business Line ACDC, Infineon Technologies AG
Balu Balakrishnan, CEO, Power Integrations
Jim Witham, CEO, GaN Systems
Anup Bhalla, VP Engineering, UnitedSiC
Maurice Moroney, Strategy Marketing & Business Lead, Analog Devices (ADI)
Guy Moxey, Senior Director Power Products, Wolfspeed, A CREE Company
Jan Huijink, Technical Marketing Manager, WeEn Semiconductors

Wide-bandgap (WBG) semiconductor technologies such as silicon carbide (SiC) and gallium nitride (GaN) promise anything from universal wireless charging to power converters. WBG semiconductors are giving the right challenge to the market by providing new tools and answers to the problems that power device designers face in an era in which the watchword is “efficiency.”

16:50 CEST
10:50am EST
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Driving Wide-Band Gap Switches Successfully

Eric Benedict, Senior Applications Engineer, Analog Devices
Wide band gap switches offer significantly improved performance over traditional silicon based switches. This allows for impressive reductions in converter size and increased efficiency, but to unlock these potential benefits, WBG switches need to be properly driven. Many of the benefits of the WBG switches make their use more difficult, but with the right techniques and gate driver selection, the full potential of the WBG switches can be achieved. This talk will highlight some key challenges and solutions for successfully driving WBG switches.

17:00 CEST
11:00am EST
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Development of SiC Power Diodes

Jan Huijink, Technical Marketing Manager, WeEn Semiconductors
Silicon Carbide (SiC) is a material widely used for the production of medium to high voltage power semiconductors, due to its inherent material properties of wide band gap and high thermal conductivity. Nowadays, SiC Schottky Diodes are the most popular SiC power devices in the market. The earliest SiC Schottky diodes used a pure Schottky barrier diode (SBD) structure. Then a new structure called Junction Barrier Schottky (JBS) with lower reverse leakage current was introduced. The latest structure is called Merged PN Schottky (MPS), exhibiting massively increased surge current handling capability. In this presentation, we will first show the reason why SiC power devices have superior performance, then share the basics of the design process of SiC Diodes. Finally, WeEn SiC MPS diodes with ultra-low reverse recovery charge (Qrr) will be introduced.

17:10 CEST
11:10am EST
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Wide-Bandgap Semiconductors: To EVs and Beyond

Filippo Di Giovanni, WBG Strategic Marketing Manager - STMicroelectronics
In the last several years, power wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) and, to a much smaller extent, gallium nitride (GaN), have had a big impact in improving the efficiency of on-board chargers, DC/DC converters, and traction inverters in electric vehicles (EVs). Now, as availability of GaN devices is beginning to increase and SiC shipments are growing quickly, WBG devices are making inroads into industrial applications and even some personal electronics. This keynote will highlight why WBG devices represent a paradigm shift and are therefore making a big difference in efficiency and, more importantly, where and how SiC and GaN can contribute to making next-generation smart industry, smart driving, and personal electronics more powerful, useful, and convenient.

17:40 CEST
11:40am EST
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From Watts to Megawatts. Enabling Broader Power Markets with Wolfspeed Silicon Carbide

Guy Moxey, Senior Director Power Products, Wolfspeed

Wolfspeed is expanding the reach of Silicon Carbide power devices into broader applications where silicon fails to deliver. From watts to megawatts,  silicon carbide is being widely adopted in all major market segments and end user systems. Wolfspeed is enabling this transition with the industries commanding position both in established product offering and new technology.

17:50 CEST
11:50am EST
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Emerging market opportunities for WBG Semiconductors

Ezgi Dogmus, Technology & Market Analyst, Yole Développement
Over the last two years, there has been remarkable adoption stories for WBGs from automotive to consumer power electronic applications. SiC has made its entry in Tesla’s cars in 2018, whereas GaN has found its way in leading smartphone OEMs’ fast chargers starting from 2019. While SiC continues its flight, GaN has only started its bright journey and is evolving very rapidly. In this talk, Yole Développement will present its analysis on market evolution and forecast in specific emerging markets such as automotive and consumer applications.

18:00 CEST
12:00am EST

Closing Agenda


June 18: Smart/Renewable Energies

14:30 CEST
8:30am EST
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Quest for smart/renewable energy

Steve Lambouses, VP of High Voltage Power - Texas Instruments
As electrification and data connectivity needs continue to grow across the globe, it’s becoming clear that semiconductors will play a key role in creating a better world by making electronics more efficient and more affordable. However, the expectations of consumers will also continue to grow in that electronics and their resulting semiconductors must also become more robust. This is a tall order (efficient, economical, and robust) for any manufacturer and will, for sure, create a divide between technology that is good at most of these versus great at all of them.

15:00 CEST
9:00am EST
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The Rise And Rise of Green Energy

Conor Power, Director of Green Energy Solutions, Analog Devices (ADI)
Over the next decade, the results of investment in Green Energy will touch our everyday lives with increasing frequency. Market drivers, both macro and micro, are creating new opportunities for both incumbent suppliers and new entrants, as the energy ecosystem becomes larger and more connected. This keynote highlights some of the challenges and discusses how technology developments in power electronics, battery management, wireless and data analytics are enabling the rise and rise of Green Energy.

15:30 CEST
9:30am EST
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Opportunities for Power Electronics in Renewable Electricity Generation

Milan Rosina, PhD., Principal Analyst , Power Electronics & Batteries at Yole Développement (Yole)
When considering the sustainable development of new electricity generation capacity and the advantages and drawbacks of different renewable electricity sources, photovoltaics (PV) and wind energy are today viewed as the most promising choice. Although PV and wind are already quite mature technologies, there is still a large untapped potential to increase their performance, reliability, and lifetime and decrease the costs of their power electronic components. In their talk, Yole Développement analysts will present the PV and wind inverter market forecasts and technology and supply chain trends. The technology and business synergies between PV, wind, and stationary battery energy storage markets will also be analyzed.

16:00 CEST
10:00am EST
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PANEL PRESENTATION — The Future of Energy

Moderator: Maurizio Di Paolo Emilio, Editor-in-chief, Power Electronics News & EEWeb
Steve Lambouses VP of High Voltage Power, Texas Instruments
Shuli Goodman, Executive Director, LF Energy
Filippo Di Giovanni, WBG Strategic Marketing Manager, STMicroelectronics
Milan Rosina PhD. Principal Analyst , Power Electronics & Batteries, Yole Développement (Yole)
Peter Friedrichs, Senior Director SiC, Infineon Technologies AG
Conor Power, Director of Green Energy Solutions, Analog Devices (ADI)

Wind energy and solar PV installations have recorded unparalleled growth over the past decade. Power semiconductor manufacturers believe that GaN- and SiC-based devices hold the key to addressing a primary hurdle for the expansion of renewable energy. But in spite of this, control, optimization, virtualization, and others can all present development challenges.

16:50 CEST
10:50am EST
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Driving a 1200 V SiC Power Module

Juan Carlos Rodriguez Ph.D., System Applications Engineer, Analog Devices
Using the ADuM4136 Isolated Gate Driver and LT3999 DC-to-DC Converter to Drive a 1200 V SiC Power Module.

17:00 CEST
11:00am EST
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The Future of Smart Energy Development

John Koon, Technology editor/writer

Devices are getting smarter, IoT is getting smarter, and the planet is getting smarter. How about energy? Smart energy harvesting is a hot topic today and being developed to generate energies from many renewable sources including sunlight, heat, motion, and more. In this session, we will explore how to generate sustainable and smart energy.

17:10 CEST
11:10am EST
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The Power of Together

Shuli Goodman, Executive Director , LF Energy
LF Energy brings together power system leaders and open-source experts to build the non-differentiating code and reference architectures that can accelerate decarbonization by enabling the digitalization of energy. A typical diffusion curve is too slow. We must have a very fast pace of innovation and adoption. Open-source tech allows vendors, suppliers, and their customers to jointly invest and work together to build the grid of the future. This is the Power of Together.

17:40 CEST
11:40am EST

Closing Conference