December 7 - Lectures/Tutorials & Preview
On Dec. 7, we will be running several 1-hour Lectures/Tutorials with live Q&A and we will preview the Technical Presentations from the whole conference. You may watch these presentations on demand all day on Dec. 7 and if you have any questions, you may come back on Dec. 8 and 9 for live Q&A chats with the speakers.

December 8 – Wide Bandgap Semiconductors
Keynotes, Panel Discussions and Technical Presentations about the latest trends in SiC and GaN

December 9 – Motor Control/Energy
Keynotes, Panel Discussions and Technical Presentations about Motor Control trends and about the Future of Energy.

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December 7: Lectures/Tutorials & Preview

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13:00 CET/ Paris Time
(7:00am EST/ New York Time)

Preview Technical Presentations

Preview on demand the Technical Presentations from the whole conference
You may watch these presentations on demand and if you have any questions, you may come back on Dec 8 and 9 for live Q&A chats with speakers. The preview is online for 24 hours.

14:30 CET (8:30am EST)

Conference Opening

Welcome and Opening by Maurizio Di Paolo Emilio, Editor of EE Times & Power Electronics News and Anne-Francoise Pelé, Editor of EE Times

Introduction to Aspencore's GaN/SiC books by Nitin Dahad, Editor of EE Times

14:40-15:40 CET (8:40-9:40am EST)


(LT1) Fundamentals of SiC and GaN

(A) Fundamentals of GaN
by Alex Lidow, Ph.D, CEO at EPC

Driven by the introduction of wide bandgap (WBG) materials in the beginning of the new millennium, power electronics is undergoing a renaissance. The most popular of the WBG semiconductor materials, SiC and GaN, are now commonly believed to be the successors to the venerable silicon MOSFET and its IGBT cousin. Whereas transitions in power electronic technologies often take decades, these two emerging WBG materials have already distinguished themselves as higher performance, cost-effective, reliable alternatives to their silicon counterparts. In this talk we will start with some of the basic thermal and electrical advantages of GaN power devices compared with their aging silicon ancestors. We will then discuss four applications where GaN power devices have demonstrated that their fate is to replace silicon and open new markets for power devices. These applications are lidar, DC-DC converters, motor drives, and satellite electronics. We will conclude with a roadmap for the next few years including expected performance improvements and increased levels of integration.

(B) Fundamentals of SiC
by Victor Veliadis, Ph.D., Professor in Electrical and Computer Engineering, North Carolina State University, Executive Director and CTO, PowerAmerica

Silicon (Si) power devices have dominated power electronics due to their low cost volume production, excellent starting material quality, ease of fabrication, and proven reliability. Although Si power devices continue to make progress, they are approaching their operational limits primarily due to their relatively low bandgap and critical electric field that result in high conduction and switching losses, and poor high temperature performance. In this lecture, the favorable material properties of Silicon Carbide (SiC), which allow for highly efficient power devices with reduced form-factor and cooling requirements, will be outlined. High impact application opportunities, where SiC devices are displacing their incumbent Si counterparts, will be reported. Material and device fabrication aspects will be highlighted with an emphasis on the processes that do not carry over from the mature Si manufacturing world and are thus specific to SiC. In particular, the talk will stress the design of MOSFETs, which are currently being inserted in the majority of SiC based power electronic systems. Fab models will be analyzed, and the vibrant U.S. SiC manufacturing infrastructure (that mirrors that of Si) will be presented.

16:00-17:00 CET (10:00-11:00am EST)

(LT2) Design considerations with GaN & SiC

By Dr. Sebastian Fahlbusch, Application Marketing Manager, Nexperia and Sebastian Klötzer, Principal Application Engineer, Nexperia

Modern Silicon Carbide and Gallium Nitride power semiconductors enable significantly power density and efficiency improvements in modern power electronic applications such as industrial, automotive, aerospace and consumer. Both technologies are expected to be the game changer for high voltage applications in the field of e-mobility and renewables. Their superior material properties compared to Silicon enable significantly higher transition speeds and switching frequencies at higher conversion efficiency. However, intrinsic advantages of GaN & SiC don’t come without further efforts when evaluating and designing the circuit. This tutorial will discuss how to properly evaluate and utilize state-of-the-art high voltage GaN & SiC devices. The session will cover PCB layout, design and measurement aspects for successful exploitation of the full potential of these technologies. The discussed topics will be illustrated by practical examples and measurements.

17:15-17:45 CET (11:15-11:45am EST)

(LT3) Extend Power Density and Lifetime of Latest IGBT Power Module in Motor Drive thru Transfer Molded Technology

By Jinchang Zhou, Product Line Manager, onsemi

Power integrated modules have been widely used in motion control for their remarkable performance, easy modular installation, and high reliability. However, as the latest die technology continues to evolve toward higher efficiency along with smaller size, there has barely been any change in packaging form over the last decade. The challenges related to packaging concern dissipating the heat from already miniaturized power devices, protecting the sensitive structure from high temperature, high voltage, and humid environmental erosion, and controlling the voltage and current overshoot. This session will discuss the transfer molded technology (TMPIM) for the latest SiC and IGBT power module packaging with design aspects in motor control applications. This module utilized epoxy to protect the substrate from delamination and can extend the temperature life cycle by 10 folds. It also enables the usage of a thick copper substrate, by adopting which, a new transfer molded module demonstrates twice the power density of a conventional gel-filled module. Moreover, the packaging cost is also greatly reduced with fewer components and a simplified process.

December 8: Wide Bandgap Semiconductors

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14:00 CET/ Paris Time
(8:00am EST/ New York Time)

Welcome & Opening

Welcome and Opening by Maurizio Di Paolo Emilio, Editor of EE Times & Power Electronics News and Anne-Francoise Pelé of Editor EE Times

14:05 CET (8:05am EST)

Opening Remarks

(WB1) SiC Power Technology Status and Barriers to Mass Commercialization

By Victor Veliadis, Ph.D., Professor in Electrical and Computer Engineering, North Carolina State University, Executive Director and CTO, PowerAmerica

In this opening presentation, the status of SiC power technology will be outlined through device progress and high-impact applications. Barriers to SiC mass commercialization will be identified and discussed, including the higher than silicon device cost, reliability and ruggedness concerns, defects that degrade device performance, and the need for a trained workforce to skillfully insert SiC into power electronics systems.

14:20 CET (8:20am EST)

Opening Remarks

(WB2) Recent Progress in Vertical Gallium Nitride Power Devices

By Robert Kaplar, Manager of the Semiconductor Material and Device Sciences Department at Sandia National Laboratories

Gallium Nitride is a wide-bandgap semiconductor that possesses exceptional material properties, such as its high breakdown electric field and high electron mobility, that make it suitable for use in power switching devices. For medium voltage applications (roughly defined here as 1.2 to 20 kV), vertical device architectures may be the most suitable. This talk will outline recent progress and the future outlook for vertical GaN power devices, including topics related to epitaxial growth, device design, processing, and characterization.

14:35 CET (8:35am EST)

(WB3) GaN – Addressing the challenges of a booming market

By Toni Versluijs, General Manager MOS & GaN Business, Nexperia

Gallium Nitride is now a mainstream power semiconductor technology with leading companies launching new generations of parts with even higher performance. Nexperia will use this keynote to discuss developments in the GaN market and detail its plans, including an insight into applications, technology and packaging innovations, plus the investment the company is making in new capacity and R&D to support the upsurge in market demand.

15:05 CET (9:05am EST)

(WB4) Latest developments in compound materials usher in new power packaging concepts

By Filippo Di Giovanni, Strategic Marketing, Innovation and Key Programs Manager, STMicroelectronics

Silicon Carbide (SiC) is powering the latest generation of electric vehicles and delivering improved performance and longer driving ranges. Still, SiC and other wide bandgap (WBG) semiconductor technologies (like GaN) are gaining traction enabling radical innovation and competitive advantage. The innovation isn’t only focused at the chip level: New packaging concepts are now being developed to complement the unique electric and physical properties of these new materials.

15:35 CET (9:35am EST)
Technical Presentation

(WB5) Ultra-low Rds(on) 750V switches enable new frontiers in inverter and circuit protection power electronics

By Dr. Anup Bhalla, Vice-President of Engineering, UnitedSiC

Growing numbers of power designers are now looking to new SiC power semiconductors to deliver their next level of application performance. To support this need, ultra-low on-resistance 750V devices (RDS(on) @ 6mohm, 9mohm) have just been introduced in the TO247-4L package. Their low conduction losses allow very compact circuit breaker applications to be addressed for residential and commercial use. The low switching losses and excellent short circuit capability of the devices make them very useful for advanced EV traction inverter designs, especially when the inverter is designed to go around the traction motor, requiring distributed placement of inverter switches.

15:55 CET (9:55am EST)
Technical Presentation

(WB6) Paralleling GaN FETs

 By Scott Durkin, Principal GaN Applications Engineer, Nexperia

This presentation explains how to overcome challenges in paralleling GaN FET and to increase the power capability of a power design.

16:15 CET (10:15am EST)
Technical Presentations

(WB7) Higher power density, manufacturing costs reduction and higher efficiency enablement in On Board Chargers - thanks to WBG devices

By Rafael Antonio Garcia Mora, System Application Engineer for OBC Application, Infineon Technologies

Currents Silicon based designs in On Board Charger enable power densities less than 2 kW/l at certain manufacturing costs with efficiencies up to 95%. With the recent developments in PHEV and BEV specifically in battery voltages, chemistries and physical space, OEMs are requested to increase the electrical features mentioned before at a lower price plus the possibility to use the xEV as an energy source for V2X. This presentation explains how the adoption of wide band gap power transistors gives the possibility to design new and easier topologies, which are bidirectional and enable power densities > 4kW/l at efficiencies impossible to achieve with Si devices.

16:35 CET (10:35am EST)
Technical Presentation

(WB8) Design considerations when selecting semiconductor materials for high power applications

By Anuj Narain, Director Power Platforms and Applications, Wolfspeed

Power designers in the 21st century have an abundance of options when selecting switching elements for their designs. The emergence of (WBG) semiconductors like SiC and GaN along with improvements in existing Si technology, allows better pairing of semiconductor materials for each power topology and application. This presentation will analyze practical design considerations when selecting semiconductor materials for a variety of high power applications.

17:00 CET (11:00am EST)
Panel Discussion

(WB9) Wide Bandgap Semiconductors: The next wave of GaN and SiC

Panel Discussion with Industry Experts, moderated by Maurizio Di Paolo Emilio, Editor of EE Times and Power Electronics News

WBG semiconductor technologies such as silicon carbide (SiC) and gallium nitride (GaN) promise benefits in wide-ranging applications from universal wireless charging to power converters.

This session will start with short introductory presentations from the panelists, followed by discussion and Q&As with the auditorium

Panelists and the Topics of their Presentations
Alex Lidow, Ph.D, CEO and Co-Founder, EPC: GaN Integration Technology and Roadmaps
Pete Losee, Director of Technology Development, UnitedSiC: Expanding 750V Gen 4 product series with 6mohm SiC FET
Stephen Olivier, VP Corporate Marketing & Investor Relations, Navitas: Electrify Our World
Paul Kierstead, Global Director of Power Product Marketing, Wolfspeed: SiC driving the change in renewable energy power conversion
Rob Rhoades, President and CTO, X-trinsic: SiC Wafering: The essential bridge from Boules to Device-ready Wafers
Caroline O’Brien, CEO at Kubos Semiconductors: Delivering a New Era of LEDs with Cubic GaN

17:40 CET (11:40pm EST)
Technical Presentation

(WB9a) Innoscience moves GaN to the next stage: mass manufacturing and applications

By Dr. Denis Marcon, General Manager, Innoscience

In this talk, we will address one of the last barriers to overcome for the large adoption of GaN devices that are large volume capabilities and prices. We will show the benefit of using high through put Silicon lines to mass manufacture 8-inch GaN technology as well as we ll give an overview of Innoscience technology and applications where Innoscience’s GaN devices (InnoGaN™) have been used.

18:00 CET (12:00pm EST)
Technical Presentation

(WB10) Modern Telecom & Datacenter SMPS powered by Si, SiC & GaN

By Francesco Di Domenico, Lead Principal Application Engineering, Infineon Technologies

Power semiconductors are key components of the Switch Mode Power Supplies (SMPS) in Telecom and Datacenter applications. In both these fields, several trends lead to SMPS higher output power in smaller form factor at the highest possible efficiency. In datacenter, this is mainly driven by the increasing use of modern artificial intelligence (AI)-assisted processors, in telecom by the power-hungry 5G radio base stations and the need to get rid of bulky and costly cabinets on the floor. The recent introduction of WBG technologies (GaN and SiC) has given SMPS designers more options to achieve these targets, through a wider choice of efficient power conversion topologies. However, Si devices provide still today a respectable cost/performance ratio in a wide range of Telecom & Datacenter SMPS applications.
We will present a quick overview of the possible design options and try to give the best “recipe” according to the main targets.

18:20 CET (12:20pm EST)
Technical Presentation

(WB11) onsemi Industrial Silicon Carbide Solutions

By CJ Waters, Technical Marketing Engineer, Power Solutions Group AMR, onsemi

As Silicon Carbide technology continues to emerge in the power component market, onsemi is expanding and developing to offer an extensive portfolio of devices. Whether it be discrete SiC devices like MOSFETs and diodes or modules that offer full SiC and hybrid combinations, onsemi has all solutions to fit your power design needs. The following presentation will highlight the different applications where SiC is emerging and exceeding compared to former Silicon technology, as well as why onsemi Silicon Carbide is the best option.

18:40 CET (12:40pm EST)
Technical Presentation

(WB12) Could your application benefit from GaN?

By Andy Smith, Director of Technical Outreach, Power Integrations

If you aren’t already considering using gallium nitride (GaN) for your power semiconductor application there’s a very good chance you are going to be left behind. GaN is not just for high end systems, it is also being used in consumer goods costing under $50 and everything in between, including lighting, chargers, and smart home and building automation. This presentation will detail why GaN is now the switching technology of choice for a surprisingly wide range of applications.

19:00 CET (1:00pm EST)
Technical Presentation

(WB13) GaN intelligent power stage for high frequency converter

By Gianni Vitale, Application Director, STMicroelectronics

Gallium nitride (GaN) transistors are crucial to develop high frequency converters and are key components to increase power density and efficiency. The faster commutation speed requires a better optimization for the driving circuits and reduction of the stray inductances to achieve a robust and safe operation of the power converter using GaN technology. One way to achieve a more compact and robust design is through a further step of integration by an Integrated SiP (System in package) solution for high frequency power supply applications, embedding GaN gate driver and Gan HEMT half bridge stage, simplifying the design and making more robust the high frequency power converter. MASTERGAN family is introduced and presented along with some of the key applications that can take advantage of an integrated intelligent power stage.

December 9: Motor Control Trends

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13:30 CET/ Paris Time
(7:30am EST/ New York Time)

Welcome & Opening

Welcome and Opening by Maurizio Di Paolo Emilio, Editor of EE Times & Power Electronics News and Anne-Francoise Pelé of Editor EE Times

13:35 CET (7:35pm EST)

Opening Remarks

(MC1) Variable Speed drives and the impact of wide band gap based inverter technologies

By Dr. Peter Friedrichs, Senior Director, SiC, Infineon Technologies

Wide band gap based power switches penetrate more and more applications due to their potential to improve the power density and efficiency of inverters. However, typically the impact for motor control was assessed to be minor due to limitations in switching speed and frequency, limiting the added value of SiC or GaN based systems. The presentation will show that despite this restriction, the benefit of SiC MOSFETs in drives can be significant. Furthermore, the availability of those switches also fosters the development of completely new motor types which can even more leverage the options given by SiC. Finally, a short excursion in short circuit handling and power supply for motor drives will complement the talk.

14:05 CET
(8:05am EST)

(MC2) The next evolution in Industrial Automation: Self-Aware Motion Control

By Jeff DeAngelis, Vice President of Industrial Communications & Motion Control, Industrial & Healthcare Business Unit at Analog Devices

The next evolution in industrial automation requires machines to independently adapt their performance parameters to complete an assigned task or re-configure themselves to optimize their behavior, based on input from a productivity enhanced artificial intelligence (AI) observer algorithm. The value of a self-aware machine is its ability to maximize productivity, extend the operational lifespan of equipment, and reduce maintenance costs. This keynote will discuss the necessary performance levels required to achieve Self-Aware Motion Control.

14:35 CET
(8:35am EST)

(MC3) Built-in Motor and System Fault Detection and Reporting Reduces Field Returns

By Cristian Ionescu Catrina, Product Marketing Manager, Power Integrations

Missing or inaccurate diagnosis of motor and driver faults increases field returns. It is estimated that 30% of compressor returns result in a no-fault-found maintenance outcome, which means unhappy customers and increased service costs. The ability to diagnose issues remotely can greatly reduce unnecessary returns and keep the equipment in the field and running. BridgeSwitch ICs have a real-time integrated fault monitoring and reporting functions that allow remote fault diagnosis. This is achieved without the addition of external components or an increase in required processing power. In the presentation we will describe how BridgeSwitch ICs continuously monitor the circuit for over-current, over-temperature, overvoltage and undervoltage. The hardware-based control system provides fast protection while alerting the microcontroller to issues. We will review how BridgeSwitch ICs can also be utilized to provide additional detection such as monitoring for excess motor vibration. We will also examine how faults are accurately reported using a single-wire fault bus to minimize loading on the microprocessor.

15:05 CET
(9:05am EST)
Technical Presentation

(MC4) Using a 3-phase smart driver as a companion to MCUs simplifies BLDC motor design for a wide range of motor drive applications

By Miguel Mendoza, Technical Marketing Manager, Renesas

In this presentation, we discuss some key the programmable features of a new 3-phase smart gate driver that improves the performance and simplifies design of inverter design. We will show various application examples using RAA227063 to show how easily the device can be configured to address multiple applications with the same hardware, including consumer vacuums, power tools and robotics. We will share performance metrics to show benefits of some of the integrated features of the RAA227063.

15:25 CET
(9:25am EST)
Technical Presentation

(MC5) Holistic and comprehensive development methodology for inverter drive systems

 By Trung Truong, Development Engineer Model & Controls, AVL SET and Niko Haag, Development Engineer Hardware, AVL SET

Due to fast electrifying process in numerous key industries such as automotive and aviation, the development of electrical power trains and drive systems including e-machines and their inverters becomes more agile. Despite the cost-driven reduction of development time, the quality of the developed products must not be compromised. To meet this requirement, a development methodology that is fast, flexible and accurate is required.

15:45 CET
(9:45am EST)
Panel Discussion

(MC6) Motor Control for Industry

Panel Discussion with Industry Experts, moderated by Maurizio Di Paolo Emilio, Editor of EE Times and Power Electronics News

As efficiency standards for these applications continue to strengthen, cost-efficient and energy-efficient motor control solutions simplify the design and provide a high level of integration, along with enhanced safety features and certified isolation capabilities.

This session will start with short introductory presentations from the panelists, followed by discussion and Q&As with the auditorium

Panelists and the Topics of their Presentations:
Marco Palma, Director of Motor Drive Systems and Applications, EPC: GaN advantages in Motor drive applications
Matt Watson, General Manager, C2000 Real-time Microcontroller Business, Texas Instruments: How real-time control technology is making motor control more efficient, sustainable and affordable
Christoph Baumgartner, Embedded Solutions Engineer, Microchip: High Efficiency Motor Control with Microchip
Bruce Renouard, CEO, Pre-Switch: Ultra-efficiency (>99.5%) for everyone - How AI power control eliminates switching losses, filter losses, and motor losses  
Dr. Peter Friedrichs, Senior Director, SiC, Infineon: Disruptive solutions enabled by WBG in motor drives

16:30 CET
(10:30am EST)

Closing of Motor Control Track

December 9: The Future of Energy

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16:45 CET/ Paris Time
(10:45am EST/ New York Time)

Welcome & Opening

Welcome and Opening by Maurizio Di Paolo Emilio, Editor of EE Times & Power Electronics News and Anne-Francoise Pelé of Editor EE Times

16:50 CET
(10:50am EST)

Opening Remarks

(EN1) Solid-State Electrification - The Second Electrical Revolution of Smart Energy

By Thar Casey, CEO, Amber

Solid-state electrification is delivering dramatic transformations to electrical products, building intelligence and more. Today’s standard old-technology power management solutions limit engineering designs for electrical products, effectively limiting the potential value delivered. The siliconization of these 1950’s technologies delivers a significant upgrade in the functions and value possible in electrical products. These innovations open new ways the physics of electricity is managed, leveraging software-algorithms and artificial intelligence for safer and more reliable product architecture. Moreover, this modern digital intelligence enables breaker-trips 3,000x faster, digitally mitigated surges, arc-free switching, dynamic power management and smaller size footprints through silicon-chip power management, opening space to add dramatically more features at the same relative cost.

17:20 CET
(11:20am EST)

(EN2) Addressing electrification needs for 21st Century to achieve a net-zero future

By Asif Jakwani, Senior Vice President & General Manager, Advance Power Division, onsemi

At the intersection of auto and industrial is electrification via renewable energy sources. There is no way past renewable energy on the way to net-zero. Along the way, it requires efficient energy flow across the entire electric chain, from generating the power, to transmission and distribution and zero emission consumption providing a sustaining future. One of the significant opportunities addressed by onsemi is zero-emission Electric Vehicles (EVs). To enable mass adoption of EVs, high efficiency is needed to expand driving distance, addressing one side of range anxiety. At the same time, fast charging networks based on high-power and high-efficiency are enablers to provide peace of mind to make EVs a reality in the coming decades. Finally, as we address zero emissions on the consumption end, it is essential that we adopt renewable energy sources for a sustainable future.

17:50 CET
(11:50am EST)

(EN3) Doing more with less power

By Steve Lambouses, Vice President and General Manager, High Voltage Power, Texas Instruments

As the world’s appetite for more energy continues to grow, its ability to generate more power will be limited. Semiconductors are the cornerstone for bridging this gap to enable the world to do more with less power. Achieving this goal will require the adoption of new devices, new packaging and new topology advancements in order to provide disruptive benefits in costs, reliability, footprint and more. When we advance innovation to help engineers pack more power into smaller spaces, the world will benefit from more efficient, longer-lasting electronic devices.

18:20 CET
(12:20pm EST)
Technical Presentation

(EN4) Eliminating the 12V battery with the use of power modules

By Patrick Kowalyk, Automotive Principal Field Applications Engineer, Vicor

The 12V lead-acid car battery is dead. Europe has decreed that no new cars will have lead-acid batteries after 2030, creating a considerable challenge for OEMs to find alternative solutions. So what are the options? Lithium-ion battery? Or perhaps leveraging primary battery (400V or 800V)? Both efficiency and transient response are important considerations in identifying the best next step. This presentation will detail the findings from bench testing comparing a modular approach using SAC to an Automotive lead-acid battery, Lithium-ion battery, and a super cap at 48VDC, 400VDC, and 800VDC.

18:40 CET
(12:40pm EST)
Technical Presentation

(EN5) Fast EV Charging with CoolSiC™

By Pradip Chatterjee, Application Engineer, Infineon Technologies

The enabling semiconductor switch technology for efficient and power-dense EV chargers is silicon carbide. Additionally, the requirement for bi-directional power conversion is a driver and SiC devices are ideally suited to implement the function. Infineon is at the forefront of SiC MOSFET technology with their CoolSiCTM range of products which are ideal for switches in charger sub-units that can be combined to reach the highest proposed power levels. For a complete solution, Infineon complements its power switch portfolio with a whole ecosystem of matching gate drivers for optimum layout and efficiency, current sensors, microcontrollers and security controllers, along with reference designs to support rapid end-product development. . In the coming few years, technology developments will see hardware size and costs diminishing, complemented by the savings achieved by bi-directional power capability. Infineon is your partner in this journey to a better environment.

19:00 CET
(1:00pm EST)
Panel Discussion

(EN6) The Future of Energy

Panel Discussion with Industry Experts, moderated by Maurizio Di Paolo Emilio, Editor of EE Times and Power Electronics News

Renewables, energy storage, power grids, and other energy trends emphasize the reliability of aging electrical infrastructure and transmission and distribution lines around the world. Growing and supporting renewable energy poses a lot of challenges.

This session will start with short introductory presentations from the panelists, followed by discussion and Q&As with the auditorium

Panelists and the Topics of their Presentations:
Patrick Le Fèvre, Chief Marketing and Communication Officer, Powerbox (PRBX): Which role hydrogen will play in energy storage?
Gopal Mitra, Industrial Segment Leader, ABB Power Conversion: Powering Fast Chargers: Removing Barriers to Wide-Spread EV Adoption
Conor Power, Director Automation & Energy Group, Analog Devices: Renewable Energies: challenges and hopes for a clean future
Kraig J. Olejniczak, Research Scientist, Wolfspeed: The Power Distribution Revolution enabled by Mid-High Voltage SiC
Peter Wasmuth, Head of Europe, Polarium: The missing link in the renewable energy system

19:50 CET
(1:50pm EST)
Technical Presentation

(EN7) Powering the IoT ecosystem with RF-based wireless charging

By Cesar Johnston, Acting CEO of Energous

While the Internet of Things ecosystem continues to grow, its ultimate viability is limited by its current reliance on being near, or connected directly to, a power source. Or batteries which are cumbersome to change out when getting into the thousands of devices deployments. For billions of IoT devices whose inherent value is predicated on their strategic position in obscure, rugged and/or edge locations, being tethered to cumbersome charging cables — or being required to change out batteries frequently — limits their use, their design and their promise. In this talk, Cesar will dive deep into radio frequency-based (RF) wireless charging, including how can alleviate IoT’s unnecessary reliance on wires and disposable batteries that require constant changing out.

20:10 CET
(2:10pm EST)
Technical Presentation

(EN8) Driving and Protecting the Power Switches of the Future

By Charlie Ice, Product Manager, Skyworks Solutions

Pushing EV range and efficiency further requires the latest in power switch technology, such as high performance IGBTs or SiC FETs. These new devices require higher performance gate drivers and special protection circuitry to prevent accidental damage. In this session we will explore key gate driver requirements and protection methods for both IGBTs and SiC FETs.

20:30 CET
(2:30pm EST)

Conference Closing