Conference Program PowerUP 2022


June 28 - Lectures/Tutorials & Preview
On June 28, we will be running several Lectures&Tutorials about the fundamentals of GaN/SiC and the technology behind Smart. And we will preview the Technical Presentations of the whole conference. You may watch these presentations on demand all day on June 28 and if you have any questions, you may come back on June 29 and 30 to chat with the speakers.

June 29 – Wide Bandgap Semiconductors and Power Applications
- Keynotes, Panel Discussions and Technical Presentations -
Efficiency is a driving force in all industrial sectors, including the consumer one. In electronic systems, efficiency can lead to performance limitations as well as a reduction in service life. Thanks to their savings in size, weight, and cost, as well as higher efficiency, GaN and SiC power devices are making major advances beyond several applications. In the last couple of decades, the worldwide SiC and GaN scenes have been characterized by development and growing industry acceptance. Meanwhile, other semiconductor devices serve the needs of motor drive and power control. As efficiency standards for these applications improve, cost-effective and energy-efficient control solutions, test and measurement solutions, and transducers/sensors simplify design and provide a high level of integration, as well as enhanced safety features and certified isolation capabilities.

June 30 – Low Power (Energy Harvesting, Supercapacitors, Wireless Power Transfer)
- Keynotes, Panel Discussions and Technical Presentations -
With the rise of low-power wireless devices, power supply systems capable of storing energy gathered from the local environment and giving a controlled output to applications have become increasingly important. The variability of accessible energy sources, as well as the efficiency of conversion and regulation, are common issues with collected energy. The goal is to create an energy source with adequate capabilities to operate many of the low power wireless products on the market today, employing high efficiency power conversions, ultra-capacitors for storage, and techniques of energy management.

June 30 – Renewable Energies and Smart Grid
- Keynotes, Panel Discussions and Technical Presentations -
One problem to be solved for the future of humanity is related to energy, global warming, and the depletion of fossil fuels. Renewables, energy storage, power grids, and other energy trends emphasize the reliability of aging electrical infrastructure and transmission and distribution lines around the world. Growing and supporting renewable energy pose a lot of challenges. Modernization of the power system is proceeding at a steady rate. Modern control and automation systems can save energy, preserve the environment, and improve individuals' health and safety, all while boosting quality of life.

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June 28: Lectures/Tutorials & Preview

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13:30 CEST/ Paris Time
(7:30am EDT/ New York Time)

Preview Technical Presentations

Preview on demand the Technical Presentations from the whole conference
You may watch these presentations on demand and if you have any questions, you may come back on June 29 and 30 to chat with the speakers. The preview is online for 24 hours.

14:30 CEST (8:30am EDT)

Conference Opening

Welcome and Opening by Maurizio Di Paolo Emilio, Editor of EE Times & Power Electronics News

14:40-15:25 CEST (8:40-9:25am EDT)


(LT1) Non-CMOS Compatible SiC Power Device Fabrication in Volume Si Fabs

By Victor Veliadis, Ph.D., IEEE Fellow, Executive Director and CTO, PowerAmerica and Professor in Electrical and Computer Engineering, North Carolina State University

SiC devices are displacing their incumbent Si counterparts in several high volume power applications. As SiC market share continues to grow, the industry is lifting the last barriers to mass commercialization that include higher than Si device cost, relative lack of wafer planarity, the presence of basal plane dislocations, reliability and ruggedness concerns, and the need for a workforce skilled in SiC power technology to keep up with the rising demand. To enable cost effective SiC manufacturing, high yielding fabrication processes are required. Numerous well-established silicon technology processes have been successfully transferred to SiC. However, SiC material properties necessitate development and optimization of specific processes including in wafer thinning, etching, heated implantation and anneal, and low resistivity Ohmic contact formation. In this presentation, we will review key aspects of SiC fabrication technology and outline non-CMOS compatible processes that have been streamlined to allow for mass SiC device fabrication in standard Si fabs.

15:30-16:00 CEST (9:30-10:00am EDT)

(LT2) Integrated Circuit GaN inverter for Motor Drive Applications above 1 kW

By Marco Palma, Director of Motor Drives Systems and Applications, EPC

Leading the evolution of Gallium Nitride technology, EPC introduced in 2019 the first integrated circuit of the ePower family. These devices follow the “digital in - power out” concept to simplify converter and inverter designs. In this presentation I will show the experimental results of six EPC23101 integrated circuits connected in inverter topology to drive a motor. the EPC23101 was introduced in 2021 and is part of the ePower family. In the reference design EPC9173, the six EPC23101 are configured as floating smart switches with embedded gate driving function, decoupling the digital ground from the power ground and allowing the choice of source shunts to measure motor currents on the low side switches. The main difference between a conventional MOSFET inverter and the EPC9173 GaN IC inverter is that the GaN inverter is operated at a higher PWM frequency and the lower dead time. This allows the extend the use of the permanent magnet motor beyond the limits imposed by the MOSFET inverter, allowing a higher system efficiency.

16:00-16:30 CEST (10:00-10:30am EDT)

(LT3) Journey towards manufacturing of high quality GaN Epi Wafers for high voltage applications

By Satya Dixit, Board Member and Advisor at Future Semiconductor Business (FSB)

Manufacturing GaN wafers has gone through a long and windy process and have reached maturity to some extent to be able to produce low-cost devices. There is so much more to be done to create scalable (to 8-inch, 12-inch, and larger Epi wafers), high quality material to be able to make devices with higher breakdown voltages, higher current and higher frequency to address larger application domains. We will review the available methods currently in practice and the new and upcoming technologies in creating GaN membranes to apply to future applications.

16:45-17:15 CEST (10:45-11:15am EDT)

(LT4) A look into future SiC Power Devices

By Prof. Peter Gammon, University of Warwick; Founder of PGC Consultancy
Today, SiC Schottky diodes and MOSFETs are available from 600-1700V and are being widely adopted across the automotive industry. Yet, this narrow voltage range is just the tip of SiC’s potential. With a freestanding substrate and a native oxide, SiC is a direct analogue of Silicon, and the same diverse range of devices across a large voltage range is also achievable. In this talk, we shall review work on the development of high voltage MOSFETs, superjunction devices and bipolar devices (IGBTs and thyristors) up to voltage ratings of more than 20kV. Finally, another application that remains relatively unexplored is SiC’s use in space, requiring radiation hardened devices.

17:15-18:15 CEST (11:15-12:15pm EDT)

(LT5) From Characterization to Lifetime considerations - Best Practice in Power Electronics

By Dr.-Ing. Martin Schulz, Global Principal, Application Engineering, Littelfuse
Designing power electronics comes with the challenge of making a robust statement regarding the lifetime of the final design. A precise estimation needs to consider the thermal performance which in turn demands to exactly know the performance of the power component in use. Dynamic losses need to be measured in a characterization setup to predict switching losses during operation and a load profile needs to be available to start the calculations. The session will get into details of conducting the correlated measurements as well as giving an insight into the way a lifetime can be predicted. The procedures described will also reveal the kind of information needed to achieve a high level of confidence for the statement on lifetime.

June 29 – Wide Bandgap Devices and Power Applications

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14:00 CEST/ Paris Time
(8:00am EDT/ New York Time)

Welcome & Opening

Welcome and Opening by Maurizio Di Paolo Emilio, Editor of EE Times & Power Electronics News

14:05 CET (8:05am EDT)

Opening Remarks

(WB1) System benefits of GaN and SiC devices in the next generation of On-board chargers and USB-C Adapters with ultra-high power density

By Matthias Kasper, Lead Principal Engineer, System Innovations Lab, Infineon Technologies Austria

The inherent advantages of wide band-gap devices compared to their Silicon counterparts, i.e. low or even no reverse recovery charge, lower output and gate charges, etc., enable the operation of power electronic systems based on wide band-gap devices at considerably higher switching frequencies. This facilitates the design of systems with power densities far beyond the limits of state-of-the-art Si systems, which will be demonstrated in this talk based on two very different applications: the next generation of 240 W mobile chargers with two USB-C output ports, and three-phase 11 kW on-board chargers.

14:45 CEST (8:45am EDT)


(WB2) Straightforward Design of Reliable and Efficient Motor Drivers

By Cristian Ionescu Catrina, Senior Product Marketing Manager, Power Integrations

Designers are under constant pressure to develop compact, efficient and reliable motor drive systems that are certified to international safety standards. Compact, reliable and certified permanent magnet and brushless DC (BLDC) motor drives are necessary for a variety of appliance applications, including refrigerator compressors, pumps in dishwashers and washing machines, condenser fans in high efficiency air conditioners, and range hood and ceiling fans. Clearly there is a need for a simple-to-use, IEC 60335- and IEC 60730-certified BLDC motor solution that can not only help with the design of the motor control system, but also deliver fault diagnosis and protection. This keynote will discuss the growth in the market for BLDC and permanent magnet motors that address the market up to 400 W, and the factors that are driving the need for new solutions which are energy efficient and reliable. It will introduce BridgeSwitch™, Power Integrations’ innovative single- and three-phase motor driver IC family and the latest Motor-Expert™ GUI - unique in the market - which makes design and certification simpler and faster, reducing time-to-market.

15:15 CEST (9:25am EDT)

(WB3) Enabling GaN-based applications today, tomorrow and beyond

By David Snook, Manager GaN Products, Texas Instruments

In the fast-evolving high-voltage industry, where do silicon carbide (SiC) and gallium nitride (GaN) fit in, and how can more applications take advantage of these emerging technologies? Today, GaN technology is enabling more applications than ever before, from EVs to power delivery – and the number of GaN-based designs is rising due to the fast switching speed and high efficiency GaN enables. But there are still some barriers to widespread adoption of GaN technology. This session will explore the key systems benefitting from GaN today, overcoming perceived challenges in designing with GaN, and the future of GaN in next-generation industrial applications.

15:45 CEST (9:45am EDT)
Technical Presentation

(WB4) Integrated GaN technologies for high frequency conversion

By Gianni Vitale, Excellence Center Power Application Director at STMicroelectronics

Gallium nitride (GaN) transistors are crucial to develop high frequency converters and are key components to increase power density and efficiency. The faster commutation speed requires a better optimization for the driving circuits and reduction of the stray inductances to achieve a robust and safe operation of the power converter using GaN technology. More compact and robust design is achieved through a further step of integration by an Integrated SiP (System in package) solution for high frequency power supply applications, embedding GaN gate driver or controllers with Gan HEMPT devices, simplifying the design, and making more robust the high frequency power converter. MASTERGAN and VIPERGAN families with key applications will presentenced to show the advantages of the integrated GaN technologies.

16:05 CEST (10:05am EDT)
Technical Presentation

(WB5) Silicon Carbide Based 30kW High Power 3 Phase Interleaved LLC DCDC for HVDC in Data Centers

By Jianwen Shao, Power Applications Manager, Wolfspeed

Wolfspeed’s 30kW 3-phase LLC DCDC converter provides high power density and high efficiency power for high-current industrial power systems and HVDC in data centers. Featuring Wolfspeed’s industry leading Silicon Carbide technology, this inverter reduces system size, weight and cooling requirements. Learn more about how the topology selection, control and layout for this reference design can help designers create best-in-class power systems for today’s highly efficient market demands.

16:25 CEST (10:25am EDT)
Technical Presentations

(WB6) Triumphing over the Challenges of Increased Power Delivery

By Andrew Smith, Director of Technical Outreach, Power Integrations

The growth in the feature sets and sophistication of consumer products, industrial equipment and appliances increases challenges for power supply designers. These challenges include the need to deliver more power without increasing space or heat, as well as reducing no-load and standby consumption. In this presentation, we will look at how to increase power in non-isolated (buck) conversion, simplify isolated converter design using power system design tools, and leverage the benefits of wide bandgap devices to increase efficiency or provide compact and efficient solutions for high-voltage applications.

16:45 CEST (10:45am EDT)
Technical Presentations

(WB7) Isolated, flexible, modular: Power electronics in surface mounted power devices (SMPD)

Dr.-Ing. Martin Schulz, Global Principal, Application Engineering, Littelfuse

This session will get into the benefits of the SMPD-devices and hint out the methods of mounting a multitude of those on a single heat sink. The modular concept of the SMPD is explained, showing how power electronic building blocks in a variety of topologies and technologies simplify the design of literally any application. Scalability is demonstrated with a portfolio of modules reaching from low-voltage MOSFETs to SiC-MOSFETs and IGBT-technology covering 45V to 3000V in this innovative package.

17:00 CEST (11:00am EDT)
Panel Discussion

(WB8) Recent Progress and the Future Outlook for GaN Solutions

Panel Discussion with Industry Experts, moderated by Maurizio Di Paolo Emilio, Editor of EE Times and Power Electronics News

Gallium Nitride is now a mainstream power semiconductor technology with leading companies launching new generations of parts with even higher performance. In this panel discussion we will explore the recent progress and the future outlook for GaN solutions, including topics related to epitaxial growth, device design, processing, and characterization. Moreover, we will address the last barriers to overcome for a widespread adoption of GaN devices, such as large volume capabilities and prices.


  • Doug Bailey, Vice President of Marketing & Applications Engineering, Power Integrations
  • Stephen Oliver, VP Corporate Marketing & Investor Relations, Navitas
  • Dr. Dinesh Ramanathan, Co-Founder and Co-CEO, NexGen Power Systems
  • Daniel Sherman, PhD, Vice President of R&D, VisIC Technologies
  • Philip Zuk, SVP Technical Marketing, Applications and Business Development, Transphorm
17:45 CEST (11:45am EDT)
Technical Presentation

(WB9) The Drive Towards GaN

By Ashish Gokhale, Product Line Manager, Power Products, Skyworks

The huge increase in demand for electrical power due to increased internet traffic and 5G deployment, coupled with the urgent need for efficient power converters for green energy and the advent of Electric Vehicles has created ideal conditions for a disruption in this market. Wide bandgap semiconductors, especially GaN power switches are a compelling replacement for the traditional silicon MOSFET/SJ power switches in these systems. GaN offers substantial reductions in power losses, overall system footprint and cost compared to the legacy solutions. However, GaN switches have specialized drive requirements. This session will elaborate on the drive challenges faced by system designers when considering GaN power switches.

18:05 CEST (12:05pm EDT)
Technical Presentation

(WB10) Recent GaN Innovation, Moving from Consumer to Data Center and Automotive

By Stephen Russell, Senior Process Analyst – Power Devices, TechInsights

Gallium Nitride (GaN) is already succeeding in replacing silicon (Si) power devices in the consumer market. GaN entered the USB-C charger market towards the end of the last decade with third party vendors offering high performance accessories to laptops and mobile phones. Over the past year we have seen a shift in market acceptance with major first party vendors such as Apple and Samsung now including GaN in their chargers. In this presentation we will investigate the innovations found within recently released GaN devices for both low-voltage (< 600 V) devices aimed at data centers and high voltage (>650 V) devices looking to enter the light industrial and even automotive markets.

18:25 CEST (12:25pm EDT)
Technical Presentation

(WB11) Re-inventing Power Electronics: NexGen Power Systems with Vertical GaN

By Dr. Dinesh Ramanathan, Co-Founder and Co-CEO, NexGen Power Systems

NexGen Power Systems brings to the market the world’s smallest, lightest, and most efficient power systems that are based on its unique and proprietary GaN-on-Gan power semiconductor technology, NexGen Vertical GaN™. Not only does Vertical GaN provide all the benefits of what a perfect power semiconductor should have: High Switching Frequency, High Voltage, stable on-resistance, low temperature coefficient, single and repetitive avalanche capability, and >10μs short-circuit protection. Furthermore, these power systems are based on NexGen’s scalable, software configurable power platform that un-locks the true potential of the semiconductor technology and re-invents power electronics.

18:45 CEST (12:45pm EDT)
Technical Presentation

(WB12) Next generation Wide Bandgap Semiconductors and Packaging Innovations

By Tom Wolf, Technical Applications Manager, Nexperia

For maximum efficiency, all parts of a high voltage solution must be considered. Nexperia’s next generation GaN and SiC systems are designed for maximum system flexibility, manufacturing scalability, reliability beyond AEC requirements and exceptional thermal solutions are required. This session will detail our innovations to meet these design goals.

19:05 CEST (1:05pm EDT)
Technical Presentation

(WB13) Charge ahead with CoolSiCTM in DAB power stages

By Elisabeth Preuss, Global Application Manager, Infineon Technologies

Bidirectional fast DC EV charging is seen as one as the key enabler for optimizing energy consumption through EVs in smart grids. CoolSiCTM topologies enable efficient high power conversion using DAB-configuration for wide output range designs. This presentation will give insights into market trends, the use case and the concept of high efficient power stage designs.

19:25 CEST (1:25pm EDT)
Technical Presentation

(WB14) GaNFast Power ICs: Performance and Sustainability

By Stephen Oliver, VP Corporate Marketing & Investor Relations, Navitas

Gallium Nitride (GaN) will “Electrify Our World™” and accelerate our transition away from fossil fuel loads and address a 2.6 Gton per year reduction in CO2 by the time of the Paris Accord target – 2050. Let’s discover new, fast Gallium Nitride and learn how it is the catalyst for a next-generation of power conversion as we leave behind the old, slow silicon chip.

19:45 CEST (1:45pm EDT)
Technical Presentation

(WB15) SiC Climbs the Voltage Ladder - Adopt SiC With Ease, Speed and Confidence

By Rob Weber, Product Line Director, Silicon Carbide Power Solutions Group, Microchip

The adoption of SiC MOSFETs has become commonplace, driven by the increasing availability of these products with ratings between 650V and 1200V. As SiC semiconductor materials and components have matured, the maturity of base-level processes such as thick epitaxy also improves, allowing more designers to extend SiC’s benefits to higher voltages and power levels. Over the past year, Microchip has released several dozen new SiC die, discrete, and module products rated for 1700V and 3.3 kV – all adhering to Microchip’s trusted legacy of ruggedness and reliability. These 1700V and 3.3 kV SiC power devices help shift the power conversion paradigm.

June 30: Low Power Technologies

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13:30 CEST/ Paris Time
(7:30am EDT/ New York Time)

Welcome & Opening

Welcome and Opening by Maurizio Di Paolo Emilio, Editor of EE Times & Power Electronics News

13:35 CET (7:35am EST)

Opening Remarks

(LP1) Energy Harvesting and Digital Isolation for IoT Sustainability, Safety, and Data Integrity

By Karthi Gopalan, General Manager, Isolation Business Unit, Industrial Automation at Analog Devices

We live in a connected world with tens of billions of IoT devices, soon trillions that reside in wired & wireless domains. We have a tremendous opportunity to transform how we live and work and strive to improve productivity to make the world better and safer! The presentation will demonstrate how intelligent energy harvesting and innovative digital isolation solutions can have a big impact: For wireless IoT, energy harvesting has the potential to up the power sustainably. A new chip-scale energy harvester will exemplify an accurate way to harvest thermal energy widely available in industrial environments. Safety and data integrity are significant concerns for wired IoT in noisy and dangerous high voltage environments, typical for many of these applications. Next generation integrated digital isolation provides accurate current and voltage sensing for robots, energy metering, battery management, and protected Gbps communication with industrial or medical instruments. Compact isolated DC/DC converters provide easy-to-use, EMC compliant, fully integrated multi-protocol transceivers for Industry 4.0. Technologies are there to achieve better IoT sustainability, safety, and data integrity – we need to leverage them at a grander scale.

14:15 CEST
(8:15am EDT)

(LP2) The Rise of Wireless Power Networks

By Cesar Johnston, Chief Executive Officer, Energous 

Projected to reach 39.3 billion devices by 2025 (according to IDC’s “Worldwide Global DataSphere IoT Device and Data Forecast”), the IoT ecosystem is expanding at a rapid rate. These billions of internet-connected devices all share one common need: reliable and consistent power. However, most IoT devices in current deployments rely on either cumbersome charging cables or on batteries that must be frequently replaced at varying intervals, placing massive strains on maintenance teams and limiting the value these devices can deliver. In this talk we will discuss the rise of Wireless Power Networks that not only deliver reliable & consistent wireless power, but also helps aggregate IoT device data transfer to the Cloud from the next generation of IoT deployments.

14:45 CEST
(8:45am EDT)

(LP3) The Supercapacitor – A Versatile Energy Storage Device and How to Use it

By Dr. René Kalbitz, Product Manager, Würth Elektronik

Supercapacitors are easy to use short-term energy storage devices, which are in many, but not all, aspects comparable to batteries. They require, like any other energy storage system, a certain infrastructure in order to store and deliver their energy. In the course of this keynote, we will discuss important properties of Supercapacitors and key features of the design-in process.

15:15 CEST
(9:15am EDT)
Technical Presentation

(LP4) Wireless Charging for Low-Power Applications

Gopi Akkinepally, Principal Product Marketing Manager, Renesas Electronics

Low-power devices are typically in small form factors which don’t have space to add a big charging port, often needing waterproofing and higher reliability. Wireless power is a natural fit to address these issues. However, the non-standard industrial design of many of these devices has made it challenging to add wireless charging. In this talk, Gopi will cover various options available for low-power devices, as well as the systematic design methodology system designers can use to integrate wireless charging into their systems.

15:30 CEST
(9:30am EDT)
Technical Presentation

(LP5) Minimizing the Energy Footprint of the Digital Economy with High Bandwidth IVRs

By Trey Roessig, Chief Technology Officer & SVP Engineering, Empower Semiconductor

The exponential increase in the amount of data being communicated and processed around the globe is driving the energy consumption of data centers and communications networks to 17% of total electricity demand worldwide by 2030 1, dramatically increasing pollution, carbon emissions and cost. Empower Semiconductor was founded with the mission to “minimize the energy footprint of the digital economy” by developing novel fully integrated power management solutions that both increase the performance and reduce the power consumption of energy-hungry, data-intensive applications. Empower Semiconductor solutions integrate dozens of components into a single IC increasing efficiency, shrinking footprints by 10x and delivering power with unprecedented simplicity, speed & accuracy and with zero discrete components for a wide range of applications including mobile, wearables, 5G, AI, and data centers. (1 Nature, “How to stop data centres from gobbling up the world’s electricity,” September 2018)

June 30 – Renewable Energies and Smart Grid

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15:45 CEST/ Paris Time
(9:45am EDT/ New York Time)

Welcome & Opening

Welcome and Opening by Maurizio Di Paolo Emilio, Editor of EE Times & Power Electronics News

15:50 CEST
(9:50am EDT)

Opening Remarks

(EN1) Why Sustainable Energy is Essential for a Better Future

By Hassane El-Khoury, President and CEO, onsemi

Energy is essential to economic growth and prosperity. While renewable energy will mitigate climate change, it needs to be cost competitive with traditional forms of energy and easily accessible to ensure a sustainable future that meets the energy needs of future generations. A 21st century zero-emission energy network must be enabled by power electronics that minimize adverse impacts of green-house emissions and transition global economies to a sustainable growth path. Innovations in power semiconductors are at the heart of this transformation, both in switching and packaging technologies, as well as innovations in new materials such as Silicon Carbide (SiC), offering extended driving range and high power and performance for EVs. Hear onsemi CEO Hassane El-Khoury share his insights into energy infrastructure and how onsemi is not only working on its own net-zero goals but innovating to deliver high-performance products today for the sustainable ecosystem’s energy needs of tomorrow.

16:30 CEST
(10:30am EDT)

(EN2) From Sun to Wheels - Silicon Carbide is the Future of Green Energy

By Guy Moxey, Senior Director of Power Marketing, Wolfspeed

As the world accelerates its adoption of wide scale green energy, Wolfspeed is leading the industry-wide transition from silicon to Silicon Carbide. Power derived from the sun or wind must be converted, connected and distributed through power electronics systems that operate with the highest efficiency, smallest size and lowest system cost. Silicon Carbide increases both power system efficiency and power density at every stage of this ecosystem. Energy storage for overall smart grid use and stability requires distributed energy resources that localize clean energy generation, allow point-of-load energy storage and utilize bi-directional power. Silicon Carbide, as a proven scalable technology, dramatically improves the power architectures used in such systems so that the power semiconductor is no longer the weak link, or gating factor, for global green energy.

17:00 CEST
(11:00am EDT)

(EN3) Broad adoption of SiC MOSFETs in EVs accelerates electrification and brings benefit to industrial applications

By Filippo Di Giovanni, Strategic Marketing, Innovation and Key Programs Manager, Power Transistor Sub Group, STMicroelectronics

Since their introduction some years ago, SiC products have sparked car electrification by improving efficiency, reducing heat waste, and taking less space. These factors are enticing buyers by delivering longer driving ranges – and reducing range anxiety, making cooling systems less complex and cheaper, and allowing faster charging. Making SiC products in automotive-grade versions since introducing them to the market has been a big challenge. Dedicated products such as ST’s 2nd -generation MOSFETs were the first to fully address automotive requirements. These are now complemented by STPOWER GEN3 with further significant improvements in both on-state and switching performance. STPOWER GEN3 products are fully tested and debugged in the harsh car-hood environment and can be safely deployed across the full spectrum of industrial applications, including charging stations, which represent a large chunk of the highly diverse industrial market. 

17:30 CEST (11:30am EDT)
Technical Presentation

(EN4) Smart Grid enables quantum improvement in efficiency of Energy management

By Pranith Joy, Product Manager, Industrial Backplane connectors, Amphenol Communications Solutions

Soaring energy prices is requiring more sophisticated energy management systems. Smart Grid is the referred as the future of the Electrical Power system spanning the generation, transmission and distribution of power at most optimum level. Smart Grid increases the capacity and flexibility of the network and provides advanced sensing and control through modern communications technologies aided by reliable connectors.

17:50 CEST (11:50am EDT)
Technical Presentation

(EN5) Increase system reliability in renewable energy and smart grid with best-in-class isolation technology

By Alex Triano, Product Marketing and Applications Manager, Solid State Relay Business, Texas Instruments

Learn how capacitive and magnetic isolation are setting a new benchmark for isolation technologies in high-voltage systems. They enable higher reliability for Solar Energy, Energy Storage Systems (ESS), EV chargers and more. In this talk you will learn:
- What is capacitive and magnetic isolation and how they compare to optically isolated solid-state photorelay solutions or electromechanical relays and contactors.
- How the new solid-state relay family from TI enables you to improve system performance while saving cost and reducing solution size.
- Practical solutions to control high voltage power paths, actively discharge high voltage capacitors, isolation check / insulation resistance monitoring and more.

18:10 CEST (12:10pm EDT)
Panel Discussion

(EN6) Prospects and Challenges of Silicon Carbide in the Energy Markets

Panel Discussion with Industry Experts, moderated by Maurizio Di Paolo Emilio, Editor of EE Times and Power Electronics News

As Silicon Carbide technology continues to emerge in the power component market, companies are expanding and developing to offer an extensive portfolio of devices. In the last couple of years, the worldwide SiC scenes have been characterized by development and growing industry acceptance. In this panel discussion, we will explore the prospects and challenges of Silicon Carbide in the context of multiple energy market trends for its large adoption.


  • Jay Barrus, President, ROHM Semiconductor USA
  • Chris Dries, General Manager, Qorvo Power Device Solutions
  • Dr. Peter Friedrichs, Vice President SiC, Infineon
  • John Perry, Vice President & General Manager, Discrete Power Devices, Wolfspeed
  • Rob Rhoades, Co-Founder and President, X-trinsic
  • Steven Shackell, Director, Power Semiconductor Global Supplier Marketing, Arrow
18:55 CEST (12:55pm EDT)
Technical Presentation

(EN7) Modern gate drivers for SiC MOSFETs short-circuit protection

By Gabriel Cretu, Application Engineer for Industrial Gate Driver ICs, Infineon Technologies

Today’s advancements in SiC MOSFETs development enable even higher performance in their operation. But this performance improvement results in decreased short-circuit robustness. In the end this means that the short-circuit protection needs to be faster and more precise. In this presentation we will show that today’s gate drivers with DESAT are still a great solution for SiC MOSFETs short-circuit protection. We will highlight the requirements and performances of the DESAT protection circuit in modern gate drivers from Infineon.

19:15 CEST (1:15pm EDT)
Technical Presentation

(EN8) Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

By James Victory, Fellow – PSG TD Modeling and Simulation Solutions, onsemi

Modern-day power electronics encompass a broad spectrum of semiconductor device types, all of which present unique benefits and trade-offs in the design spectrum. Efficient power electronic design hinges on the availability of accurate and predictive SPICE models to realize all the individual device benefits and trade-offs. This paper proposes novel physical and scalable SPICE models for power electronic semiconductors, including wide bandgap devices. The models are based on process and layout parameters, enabling design optimization through a direct link between SPICE, physical design, and process technology.